Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.
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Sign up using Email and Password. Philips Semiconductors, 6F, No.
No liability will be accepted by the publisher for any consequence of its use. Note that as Phil said, you’ll be replacing multiple components in your circuit — and it’s far from unlikely you’ll also have to change a few bias resistors to keep the same performance.
Philips Semiconductors Philippines Inc.
SGS Thomson Microelectronics
Designed for use in general purpose power amplifier and switching applications. Product data sheet Supersedes data of Apr Product specification Supersedes data of Apr They are designed for high speed. BB Low-voltage variable capacitance double diode.
BoxTelFax Belarus: Product data sheet Supersedes data of Jan N-channel enhancement mode field-effect transistor Rev. Start display at page:. High voltage fast-switching NPN power transistor.
Sign up using Facebook. I have to replace a faulty BFY51 Transistor. Can anyone please suggest a substitute for the BFY51 transistor? Description in a plastic package using TrenchMOS technology.
BZX series Voltage regulator diodes. Product data sheet Supersedes data of Oct That said, this question could be improved by explaining what, presumably, radio it is used in which would narrow down what possible substitutions could be made. Phil Frost – W8II High-speed switching No secondary breakdown.
BFY51 from CDIL
High oltage Switching Features: Characteristic Symbol Rating Unit. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with. Stress above one or more of the limiting values may cause permanent damage to datazheet device.
These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. General description PNP general-purpose transistors.
Benefit is lower component count, internal compensation for temperature and current gain spread.
DATA SHEET. BFY50; BFY51; BFY52 NPN medium power transistors DISCRETE SEMICONDUCTORS Apr 22
Hotel Minsk Business Center, Bld. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. A linear amplifier 1. Exposure to limiting values for extended periods may affect device reliability. Product overview Type number. General description NPN general-purpose transistors. I could not find one in the market since they have been discontinued.
Product specification IC24 Data Handbook. Home Questions Tags Users Unanswered.